melanie101
05-04-2010, 11:58 PM
Edited by seekic.com,the leading IC purchasers' best choice of platform for one-stop valued service!
Description:
The 2SK3018 (http://www.seekic.com/icdata/2SK3018.html) is a kind of transistor which belongs to N-channel silicon MOSFET.It can be used in interfacing and switching.It si available in taping package.
The following is about its features. (1) low on-resistance; (2) fast switching speed; (3) low voltage drive (2.5 V) makes this device ideal for portable equipment; (4) easily designed drive circuits; (5) easy to parallel.
Then is some information about absolute maximum ratings at TA is 25℃. (1): drain-cource voltage(VDSS) is 30 V; (2): gate-source voltage(VGSS) is ±20 V; (3): drain current for the type of continuous(ID) is 100 mA and for the type of pulsed(IDP) is 200 mA; (4): reverse drain current for the type of continuous(IDR) is 100 mA and for the type of pulsed(IDRP) is 200 mA; (5): total power dissipation(PD) is 200 mW; (6): channel temperature(TCh) is 150℃; (7): storage tempterature(TSTG) is from -55℃ to 150℃; (8): the maximum of the gate-source leakage is ±1 μA at the condition of VGS is ±20 V and VDS is 0 V; (9): the minimum of the drain-source breakdown voltage is 30 V at ID is 10 μA and VGS is 0 V; (10): the minimum of the gate threshold voltage is 0.8 V, the maximum is 1.5 V when VDs is 3 V and ID is 100 μA; (11): reverse transfer capacitance is 4 pF at f is 1 MHz; (12): both the rise time and the turn-off delay time are 80 ns when ID is 10 mA and VGS is 5 V.
Description:
The 2SK3018 (http://www.seekic.com/icdata/2SK3018.html) is a kind of transistor which belongs to N-channel silicon MOSFET.It can be used in interfacing and switching.It si available in taping package.
The following is about its features. (1) low on-resistance; (2) fast switching speed; (3) low voltage drive (2.5 V) makes this device ideal for portable equipment; (4) easily designed drive circuits; (5) easy to parallel.
Then is some information about absolute maximum ratings at TA is 25℃. (1): drain-cource voltage(VDSS) is 30 V; (2): gate-source voltage(VGSS) is ±20 V; (3): drain current for the type of continuous(ID) is 100 mA and for the type of pulsed(IDP) is 200 mA; (4): reverse drain current for the type of continuous(IDR) is 100 mA and for the type of pulsed(IDRP) is 200 mA; (5): total power dissipation(PD) is 200 mW; (6): channel temperature(TCh) is 150℃; (7): storage tempterature(TSTG) is from -55℃ to 150℃; (8): the maximum of the gate-source leakage is ±1 μA at the condition of VGS is ±20 V and VDS is 0 V; (9): the minimum of the drain-source breakdown voltage is 30 V at ID is 10 μA and VGS is 0 V; (10): the minimum of the gate threshold voltage is 0.8 V, the maximum is 1.5 V when VDs is 3 V and ID is 100 μA; (11): reverse transfer capacitance is 4 pF at f is 1 MHz; (12): both the rise time and the turn-off delay time are 80 ns when ID is 10 mA and VGS is 5 V.